SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 478, Issue 3, 2001, Pages 123-130

Correspondence of experimental surface electronic structure of the Si(1 1 3)3 × 2 with structure models

(8) An, K S a,b Hwang, C C c Kim, H S d Park, C Y d Matsuda, I e Yeom, H W f Suga, S g Kakizaki, A b

a Korea Research Institute of Chemical Technology (South Korea)

b INSTITUTE OF MATERIALS STRUCTURE SCIENCE (Japan)

c Pohang University of Science and Technology (POSTECH) (South Korea)

d Sungkyunkwan University (South Korea)

e UNIVERSITY OF TOKYO (Japan)

f Yonsei University (South Korea)

g OSAKA UNIVERSITY (Japan)

Author keywords

Photoelectron spectroscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; CHEMICAL BONDS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; QUENCHING; SODIUM; SURFACE ROUGHNESS;

VALENCE BAND SPECTROSCOPY;

SILICON;

EID: 0035837511 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)00982-7 Document Type: Article

Times cited : (6)

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