Cesium-induced structural transformation from the Si(113)3×2 to the 3×1 surface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1473-1477

  Hwang, C C ^a,b   An, K S ^c,d   Kim, S H ^a   Kim, Y K ^a   Park, C Y ^a   Kwon, S N ^e   Song, H S ^e   Jung, K H ^e   Kinoshita, T ^f   Kakizaki, A ^c   Kang, T H ^b   Kim, B ^b  

^a Sungkyunkwan University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d Korea Research Institute of Chemical Technology   (South Korea)

^e Yonsei University   (South Korea)

^f UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CESIUM; CHEMICAL BONDS; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SPECTROSCOPY; SYNCHROTRON RADIATION;

CESIUM-INDUCED STRUCTURAL TRANSFORMATION; DANGLING BOND;

SILICON;

EID: 0001490632     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582371     Document Type: Article

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