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Volumn 36, Issue 7-8, 2001, Pages 1237-1243
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Strain effects and atomic structures in highly lattice-mismatched InAs0.6P0.4/InP modulation-doped single quantum wells
a
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Author keywords
A. Semiconductors; D. Microstructure
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL LATTICES;
CRYSTAL MICROSTRUCTURE;
ELECTRON DIFFRACTION;
MORPHOLOGY;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DOPING;
STRAIN;
STRESSES;
TRANSMISSION ELECTRON MICROSCOPY;
INDIUM ARSENIC PHOSPHIDE;
LATTICE MISMATCHED;
SELECTED AREA ELECTRON DIFFRACTION PATTERN (SADP);
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035815763
PISSN: 00255408
EISSN: None
Source Type: Journal
DOI: 10.1016/S0025-5408(01)00608-0 Document Type: Article |
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Times cited : (1)
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References (15)
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