Structural and optical characterization of InP/GaxIn1-xAsyP1-y quantum wells and interfacial layers

Journal of Applied Physics

Volumn 80, Issue 7, 1996, Pages 4033-4039

  Roth, A P ^a   Levesque P ^a   Syme, R W G ^a,b   Lockwood, D J ^a   Aers, G C ^a   Rao, T S ^a,c   Lacelle, C ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; CHEMICAL BEAM EPITAXY; DIFFERENTIAL EQUATIONS; INTERFACES (MATERIALS); MONOLAYERS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

FULL WIDTH AT HALF MAXIMUM; GALLIUM INDIUM ARSENIC PHOSPHIDE; INTERFACIAL LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030270538     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363363     Document Type: Article

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