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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 632-636

Blue-light emission from ZnSTe-based EL devices

(7) Sou, I K a Mao, J a Ma, Z a Chen, W S a Yang, Z a Wong, K S a Wong, G K L a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; PHOTOLUMINESCENCE; QUENCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; ZINC ALLOYS;

BLUE LIGHT EMISSION; SCHOTTKY BARRIER STRUCTURES; ZINC SULFUR TELLURIDE;

LUMINESCENT DEVICES;

EID: 0031141325 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01002-0 Document Type: Article

Times cited : (4)

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