Distributed inductance and resistance per-unit-length formulas for VLSI interconnects on silicon substrate

Microwave and Optical Technology Letters

Volumn 30, Issue 5, 2001, Pages 302-304

  Ymeri, H ^a   Nauwelaers, B ^a   Maex, Karen ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Distributed inductance and resistance; Lossy silicon substrate; Magnetic potential; VLSI interconnect

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC RESISTANCE; INDUCTANCE; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VLSI CIRCUITS;

MAGNETIC POTENTIAL;

OPTICAL INTERCONNECTS;

EID: 0035812393     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.1296     Document Type: Article

References (9)

1. VLSI on-chip interconnection performance simulations and measurements
2. Quasi-analytical analysis of the broad-band properties of multiconductor transmission lines on semiconducting substrates
3. Metal-insulator-semiconductor transmission lines
4. Characterization of broad-band transmission for coplanar waveguides on CMOS silicon substrates
5. Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits
6. CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate
7. Full-wave analysis and analytical formulas for the line parameters of transmission lines on semiconductor substrates, integration