Quantum well model and variation of the optical band gap in hydrogenated amorphous silicon carbon alloy films

Solid State Communications

Volumn 118, Issue 10, 2001, Pages 535-539

  Basa, D K ^a  

^a UTKAL UNIVERSITY   (India)

Author keywords

A. Disordered systems; D. Optical properties

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ENERGY GAP; HYDROGENATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

AMORPHOUS SILICON CARBON ALLOY FILMS; BRODSKY QUANTUM WELL MODELS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035811197     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00161-2     Document Type: Article

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