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Volumn 113-114, Issue , 1997, Pages 504-508

High electric field electroluminescence in hydrogenated amorphous silicon carbide alloys

Author keywords

Amorphous SiC alloy; Avalanche multiplication; Electroabsorption; Electroluminescence; High electric field; Structural disorder

Indexed keywords

DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ENERGY GAP; HYDROGENATION; SILICON CARBIDE; SPECTROSCOPY; SURFACE STRUCTURE;

EID: 0031547377     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00871-9     Document Type: Article
Times cited : (4)

References (14)
  • 3
    • 4243142436 scopus 로고
    • eds. Y. Sakurai, Y. Hamakawa, T. Masumoto, K. Shirae and K. Suzuki Elsevier Science Publishers B.V.
    • Y. Hamakawa, in: Current Topics in Amorphous Materials Physics and Technology, Part 4, eds. Y. Sakurai, Y. Hamakawa, T. Masumoto, K. Shirae and K. Suzuki (Elsevier Science Publishers B.V., 1993) p, 301.
    • (1993) Current Topics in Amorphous Materials Physics and Technology, Part 4 , pp. 301
    • Hamakawa, Y.1
  • 4
    • 0021558454 scopus 로고
    • Ed. J.I. Pankove Academic Press, ch. 2
    • G.D. Cody, in: Semiconductors and Semimetals, Vol. 21, Part B, Ed. J.I. Pankove (Academic Press, 1984) ch. 2, p. 11.
    • (1984) Semiconductors and Semimetals , vol.21 , Issue.PART B , pp. 11
    • Cody, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.