GOI impact of Cu, Ni and Al atoms on the wafer surface prior to RTP and furnace oxidations

Materials Research Society Symposium - Proceedings

Volumn 429, Issue , 1996, Pages 275-280

  Aderhold, W R ^a   Shah, N ^a   Bogen, S ^a   Bauer, A ^a   Burte, E P ^a  

^a AG Associates Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMS; CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); CONTAMINATION; COPPER; FURNACES; NICKEL; OXIDATION; SURFACE ROUGHNESS; SURFACES;

ATOMIC FORCE MEASUREMENT; FURNACE OXIDATIONS; GATE OXIDE INTEGRITY; RAPID THERMAL PROCESSING; WAFER SURFACE;

OXIDES;

EID: 0030395041     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-429-275     Document Type: Conference Paper

References (11)