Guided elastic waves in GaN-on-sapphire

Electronics Letters

Volumn 37, Issue 16, 2001, Pages 1053-1055

  Camou, S ^a   Pastureaud, Th ^a   Schenk, H P D ^b   Ballandras, S ^a   Laude, V ^a  

^a CNRS   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC RESONATORS; ACOUSTOELECTRIC EFFECTS; COMPUTER SIMULATION; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL FILTERING AND PREDICTION; TRANSDUCERS;

GUIDED ELASTIC WAVES; HIGH VELOCITY SURFACE ACOUSTIC WAVE EXCITATION;

ACOUSTIC WAVE VELOCITY;

EID: 0035797527     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010668     Document Type: Article

References (8)

1. 1-xN thin films obtained by surface acoustic-wave measurements
2. The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
3. Optimization of Si/N treatment time of sapphire surface and its effect on the MOVPE GaN overlayers
4. A mixed FEM/BEM approach to characterize surface waves on multilayer substrate
5. A1N and GaN layers deposited on sapphire or silicon substrates: Theory and experiment
6. Elastic constants of gallium nitride
7. Spontaneous polarization and piezoelectric constants of III-v nitrides
8. Elastic moduli of gallium nitride