Characteristics of ZnO film grown by MOCVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4580, Issue , 2001, Pages 445-448

  Wang, Xinqiang ^a   Yang, Shuren ^a   Wang, Jinzhong ^a   Ong, H C ^a,b   Yin, Jingzhi ^a   Yin, Zongyou ^a   Li, Mingtao ^a   Du, Guotong ^a  

^a JILIN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

MOCVD; Photoluminescence; Transmission spectrum; Ultraviolet; ZnO

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRON EMISSION; ENERGY GAP; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

DEEP LEVEL EMISSION; DEEP LEVEL TRANSITION; PLASMA-ASSISTED METALLORGANIC CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET EMISSION; ZINC OXIDE FILM;

ZINC OXIDE;

EID: 0035774724     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.444994     Document Type: Article

References (12)

1. R.F. Service, Science, 276, p. 895, 1997.
2. D.M. Bagnall, Y.F. Chen, Z. Zhu, et al, Appl. Phys. Lett. 70, p. 2230, 1997.
3. D.C. Reynolds, D.C. Look and B. Jogai, Solid State Commun. 99, p. 873, 1996.
4. H. Cao, Y.G. Zhao, H.C. Ong, et al, Appl. Phys. Lett. 73, p. 3656, 1998.
5. H. Cao, Y.G. Zhao, S.T.Ho, et al. Phys. Rev. Lett. 82, p. 2278, 2000.
6. Z. K. Tang, G. K. L. Wong, P. Yu, et al, Appl. Phys. Lett. 72, p.3270, 1998.
7. Michael H. Huang, Samuel Mao, Henning Feick, et al. Science 292, p. 1897, 2001.
8. C. R. Gorla, N. W. Emanetoglu, S. Liang, et al. J. Appl. Phys. 85, p. 2595, 1999.
9. Y. F. Chen, D. M. Bagnall, Hang-jun Koh, et al. J. Appl. Phys. 84, p. 3912, 1998.
10. D. C. Reynolds, D. C. Look, B. Jogni. Solid State Commun. 101, p. 643, 1997.
11. H. Kumano, A. A. Ashrafi, A. Heta, et al. J. Cryst. Growth 214-215, p. 280, 2000.
12. S. Bethke, K. Pan, and B.W. Wesseis. Appl. Phys. Lett. 52, p. 138, 1988.