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Volumn 4449, Issue , 2001, Pages 244-252

Rapid X-Ray Reflectivity (XRR) characterization and process monitoring of multilayer Ta/Al2O3/Ta/SiO2/Si

Author keywords

Al2O3; Density; High k dielectric; Roughness; Tantalum; X ray reflectivity (XRR)

Indexed keywords

ALUMINA; ALUMINUM; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; MONOCHROMATORS; OXIDATION; STOICHIOMETRY; SURFACE ROUGHNESS; TANTALUM; THICKNESS MEASUREMENT;

EID: 0035761249     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.450101     Document Type: Article
Times cited : (1)

References (9)
  • 2
    • 0010755046 scopus 로고    scopus 로고
    • Ultrathin SiO2 and high-K materials for ULSI gate dielectrics
    • H. R. Huff, G. Lucovsky, M. L. Green, T. Hattori, and C. A. Richter (editors)
    • H. R. Huff, G. Lucovsky, M. L. Green, T. Hattori, and C. A. Richter (editors), in "Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics", Symposium Held April 5-8, 1999 San Francisco, California, U.S.A., Vol. 567.
    • Symposium Held April 5-8, 1999 San Francisco, California, U.S.A. , vol.567


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.