RIE induced n-on-p junction HgCdTe photodiodes: Effects of passivant technology on bake stability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4454, Issue , 2001, Pages 106-115

  Dell, J M ^a   Antoszewski, J ^a   White, J K ^a   Pal, R ^a   Nguyen, T ^a   Musca, C A ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

CdTe; HgCdTe; Passivation; Reactive Ion Etching; Stability; ZnS

Indexed keywords

DEGRADATION; HETEROJUNCTIONS; PASSIVATION; PHOTODIODES; REACTIVE ION ETCHING; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

BAKE STABILITY; MERCURY CADMIUM TELLURIDE PHOTODIODES;

INFRARED DETECTORS;

EID: 0035760818     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.448166     Document Type: Conference Paper

References (17)

1. A. Rogalski, "Infrared Photon Detectors", SPIE Optical Engineering Press, Bellingham, Washington, p454, 1995.
2. xTe" Appl. Phys. Lett., 59, p. 1752, 1991.
3. 4 and Ar reactive ion etching", Semicond. Sci. Technol., 11, p.1116, 1996.
4. J. M. Dell, J. Antoszewski, M. H. Rais, C. A. Musca, B. D. Nener, and L. Faraone "Novel HgCdTe mid-wavelength infrared photovoltaic detectors fabricated using plasma induced technology", J. Electronic Materials, 29, p. 841 2000.
5. M. H. Rais, C. A. Musca, J. M. Dell, J. Antoszewski, B. D. Nener, and L. Faraone, "Characterisation of dark current in novel HgCdTe mod-wavelength infrared photovoltaic detectors based on n-on-p junction formation by plasma induced type conversion", Journal of Crystal Growth, 214/215, p. 1106 2000.
6. M. H. Rais, C. A. Musca, J. M. Dell, J. Antoszewski, B. D. Nener, and L. Faraone, "HgCdTe photovoltaic detectors fabricated using a new junction formation technology", Microelectronics Journal, 31, p. 545, 2000.
7. J. White, C. A. Musca, and L. Faraone, "Hydrogenation for ZnS passivation of HgCdTe", Appl. Phys. Lett., 76, p.2448. 2000.
8. J. Antoszewski, C. A. Musca, J. M. Dell, and L. Faraone, "Characterisation of HgCdTe n- on p-type structures obtained by reactive ion etching", J. Electronic Materials, 29, p 837, 2000.
9. Y.Nemirovsky and G.Bahir, "Passivation of HgCdTe surfaces", J.Vac.Sci.Technol., A7, p.450, 1989.
10. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine, and R.P. Ruth, "Key issues in HgCdTe-based focal plane arrays: An industry perspective", J.Vac.Sci.Technol., B10, p.1359, 1992.
11. J.M. Arias, J.G. Pasko, M. Zandian, S.H. Shin, G.M. Williams, L.O. Bubulac, R.E. De Wames, and W.E. Tennant, "MBE HgCdTe heterostructure p-on-n planar infrared photodiodes", J. Electron. Mater., 22, 1049, 1993.
12. Y.Nemirovsky, Passivation with II-VI compounds J.Vac.Sci.Technol. A8, p. 1185, 1990.
13. A.Ajisawa and N.Oda "Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing", Journal of Electronic Materials, 24, p.1105, 1995.
14. J.Antoszewski, D.J.Seymour, L.Faraone, J.R.Meyer, C.A.Hoffman; "Magneto-Transport Characterisation Using Quantitative Mobility-Spectrum Analysis", J.Electr.Materials, 24, p.1255, 1995.
15. J.R.Meyer, C.A.Hoffman, J.Antoszewski, L.Faraone; "Quantitative Mobility Spectrum Analysis of Multicarrier Conduction in Semiconductors", J.Appl.Phys. 81, p.709, 1997.
16. J. F. Siliquini, J. M. Dell, C. A. Musca, and L. Faraone, "Scanning laser microscopy of reactive ion etching induced n-type conversion in vacancy-doped p-type HgCdTe", Applied Physics Letters, 70, p.3443, 1997
17. G.Bahir, V.Ariel, V.Garber, D.Rosenfeld, A Sher, "Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes", Appl. Phys. Lett., 65, p.2725, 1994