Deformation-induced dislocations in 15R-SiC grown by sublimation

Philosophical Magazine Letters

Volumn 81, Issue 12, 2001, Pages 823-831

  Hong, Moon Hi ^a   Pirouz, P ^a   Chung, J ^a   Yoon, S Y ^a   Demenet, J L ^a   Nishiguchi, T ^a   Nishino, S ^a  

^a POSCO   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; DISLOCATIONS (CRYSTALS); FRACTURE TOUGHNESS; HIGH TEMPERATURE EFFECTS; INDENTATION; SILICON CARBIDE; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY; VICKERS HARDNESS TESTING;

THERMAL FLUCTUATIONS;

SINGLE CRYSTALS;

EID: 0035740488     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/09500830110089510     Document Type: Article

References (18)