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Journal of Electronic Materials

Volumn 30, Issue 12, 2001, Pages 1560-1568

Pattern density and deposition profile effects on oxide chemical-mechanical polishing and chip-level modeling

(4) Park, Y B a Yoon, I Y a Ryu, H H a Lee, W G a

a Hynix Semiconductor Inc (South Korea)

Author keywords

Chemical mechanical polishing; CMP modeling; Deposition profile effect; Oxide CMP; Pattern density

Indexed keywords

MASKS; MICROPROCESSOR CHIPS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTOR PLASMAS;

DEPOSITION PROFILE EFFECTS; OXIDE CHEMICAL MECHANICAL POLISHING; PATTERN DENSITY;

CHEMICAL MECHANICAL POLISHING;

EID: 0035737125 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0174-0 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.