MgxZn1-xO: A new piezoelectric material

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 2001, Pages 253-256

  Emanetoglu, N W ^a   Muthukumar, S ^a   Wu, P ^a   Wittstruck, R ^a   Lu, Y ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PROPERTIES; ACOUSTIC WAVE VELOCITY; FILM GROWTH; MAGNESIUM COMPOUNDS; PIEZOELECTRICITY; SAPPHIRE; THIN FILMS; ZINC OXIDE;

PIEZOELECTRIC COUPLING; PIEZOELECTRIC MAGNESIUM ZINC OXIDE; THIN FILM GROWTH; VELOCITY DISPERSION;

PIEZOELECTRIC MATERIALS;

EID: 0035731391     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Properties of thick ZnO layers on oxidized silicon
2. ZnO films on {001}-Cut <110>-propagating GaAs substrates for surface acoustic wave device applications
3. Microwave low insertion loss SAW filter by using ZnO/sapphire substrate with Ni dopant
4. 2/ZnO/diamond structure
5. 1-xO as a II-VI widegap semiconductor alloy
6. 1-xO alloys
7. xO films by radio frequency magnetron sputtering
8. Structural optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01-12) sapphire by metalorganic chemical vapor deposition
9. Matrix methods applied to acoustic waves in multilayers
10. Relation between elastic tensors of wurtzite and zinc-blende structure materials