Properties of thick ZnO layers on oxidized silicon

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 1994, Pages 403-406

  Moeller, F ^a   Vandahl, T ^a   Malocha, D C ^a   Schwesinger, N ^a   Buff, W ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; NUCLEATION; OXIDATION; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; STRESSES; THICK FILMS; ULTRASONIC APPLICATIONS; ULTRASONIC MEASUREMENT; ULTRASONIC WAVES;

CYCLED POWER PROCESS MODE; DEFLECTION MEASUREMENT; DEPOSITION RATES; INTERNAL STRESS; OXIDIZED SILICON; RAMP SHAPED; SURFACE ACOUSTIC WAVE PROPERTIES; THICK ZINC OXIDE LAYERS; WAFER;

ZINC OXIDE;

EID: 0028750834     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ultsym.1994.401618     Document Type: Conference Paper

References (16)