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Volumn , Issue , 1999, Pages 301-304
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Limit of the mobility enhancement of the excimer-laser-crystallized low-temperature poly-Si TFTs
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
CRYSTAL DEFECTS;
CRYSTALLIZATION;
EXCIMER LASERS;
GLASS;
INTERFACES (MATERIALS);
LOW TEMPERATURE OPERATIONS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SURFACES;
EXCIMER LASER CRYSTALLIZED THIN FILM TRANSISTORS;
FIELD EFFECT MOBILITY;
IN GRAIN DEFECTS;
LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTORS;
SCATTERING MECHANISMS;
THIN FILM TRANSISTORS;
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EID: 0033345377
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (16)
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References (3)
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