Low temperature epitaxial growth of PZT on conductive perovskite LaNiO3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 275-278

  Lung, S L ^a   Liu, C L ^a   Chen, S S ^a   Lai, S C ^a   Tsai, C W ^a   Sheng, T T ^a   Wang, Tahui ^a   Pan, Sam ^a   Wu, T B ^a   Liu, Rich ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CRYSTALLIZATION; ELECTRODES; EPITAXIAL GROWTH; FATIGUE OF MATERIALS; LOW TEMPERATURE PHENOMENA; PEROVSKITE; RANDOM ACCESS STORAGE; SEMICONDUCTING LEAD COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CAPACITOR OVER INTERCONNECT; CONDUCTIVE PEROVSKITE; LOW TEMPERATURE EPITAXIAL GROWTH;

LANTHANUM COMPOUNDS;

EID: 0035714334     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 9 thin films with a reductive process
2. 64Kbit CMVP FeRAM macro with reliable retention/imprint characteristics
3. Low thermal-budget fabrication of sputtered-PZT capacitor on multilevel interconnects for embedded FeRAM
4. Effect of composition and temperature on electric fatigue of La-doped lead zirconate titanate ceramics