5∼6 GHz-band GaAs MESFET-based cross-coupled differential oscillator MMICs with low phase-noise performance

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 12, 2001, Pages 495-497

  Yoon, Sang Woong ^a,b,c   Park, Eun Chul ^c   Lee, Chang Ho ^b   Sim, Sanghoon ^c   Lee, Sang Goog ^d   Yoon, Euisik ^c   Laskar, Joy ^a,b   Hong, Songcheol ^a,c  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

1 f noise up conversion; Capacitive coupling feedback; Cross coupled differential topology; GaAs MESFET; Phase noise; Voltage controlled oscillator (VCO)

Indexed keywords

CAPACITIVE COUPLING FEEDBACK; CMOS OSCILLATORS; CROSS COUPLED DIFFERENTIAL OSCILLATOR; CROSS COUPLED DIFFERENTIAL TOPOLOGY; LOW PHASE NOISE;

CMOS INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

MESFET DEVICES;

EID: 0035707006     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.974557     Document Type: Article

References (6)

1. A general theory of phase noise in electrical oscillators
2. Phase noise up-conversion reduction for integrated CMOS VCOs
3. 6 8GHz monolithic oscillator fabricated by 0.35μm CMOS technology
4. A 6.5GHz monolithic CMOS voltage-controlled-oscillator
5. A low-voltage 6-GHZ-band CMOS monolithic LC-tank VCO using a tunning-range switching technique
6. A 2.6GHz/5.2GHz CMOS voltage-controlled-oscillator