20-30GHz broadband MMIC power amplifiers with compact flat gain PHEMT cells

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1067-1070

  Sasaki, Yoshinobu ^a   Kurusu, Hitoshi ^a   Hoshi, Hiroyuki ^a   Hisaka, Takayuki ^a   Mitsui, Yasuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; COST EFFECTIVENESS; FEEDBACK AMPLIFIERS; FREQUENCY ALLOCATION; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

DISTRIBUTED AMPLIFIER; LOCAL MULTIPOINT DISTRIBUTION SERVICE;

POWER AMPLIFIERS;

EID: 0035695298     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A low noise 2-20GHz feedback MMIC-amplifier
2. A compact and wideband GaAs P-HEMT distributed amplifier IC based on a micro-machined CPW
3. 1 watt compact Ka-band MMIC power amplifiers using lumped element matching circuits
4. A miniaturized X-band 4-stage LNA designed using a novel layout optimization technique