Compact and wideband GaAs P-HEMT distributed amplifier IC based on a micro-machined CPW

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 213-216

  Yang, Sung Gi ^a   Seo, Kwang Seo,k ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED AMPLIFIER; INDUCTIVE LINE;

BANDWIDTH; CAPACITANCE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE AMPLIFIERS; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; WAVEGUIDES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033708949     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. K. B. Niclas et al., "On theory and performance of solid-state microwave distributed amplifiers," IEEE Trans. Microwave Theory Tech., vol. MIT-31, no. 6, pp. 447-456, 1983.
2. K. C. Gupta et al., Microstrip Lines and Slotlines, 2nd edition, Artech House, Boston, 1996.
3. K. J. Hemck et al., "Si-micromachined coplanar waveguides for use in high-frequency circuits," IEEE Trans. Microwave Theory Tech., vol. 46, no. 6, pp. 762-768, 1998.
4. S.-G. Yang et al., "11dB 0-50GHz coplanar distributed amplifier IC based on 0.25 μm - recessed self-aligned gate GaAs P-HEMTs," IEE Electron Letts., vol. 35, no. 22, pp. 1943-1945, 1999.
5. J. B. Beyer et al., "MESFET distributed amplifier design guidelines," IEEE Trans. Microwave Theory Tech., vol. MIT-32, no. 3, pp. 268-275, 1984.