Miniaturized X-band 4-stage LNA designed using a novel layout optimization technique

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1996, Pages 1213-1216

  Chaki, S ^a   Takagi, T ^a   Tsukahara, Y ^a   Matsubayashi, H ^a   Andoh, N ^a   Sasaki, Y ^a   Otsubo, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS;

EFFECTIVE CHIP AREA; SELF ALIGNED MULTILAYER GATE FIELD EFFECT TRANSISTOR (SAMFET); X BAND FOUR STAGE LOW NOISE AMPLIFIER;

MICROWAVE AMPLIFIERS;

EID: 0029703042     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)