Program, erase and retention times of thin-oxide flash-EEPROMs

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 431-434

  Iannaccone, G ^a   Gennai, S ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

CHE; Retention times; Schr dinger equation; Thin oxide

Indexed keywords

ALGORITHMS; CARRIER CONCENTRATION; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON TUNNELING; FERMI LEVEL; OXIDES; QUANTUM THEORY;

CHANNEL HOT ELECTRONS (CHE); QUANTUM CONFINEMENT;

FLASH MEMORY;

EID: 0035690461     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/62583     Document Type: Conference Paper

References (3)

1. Flash memory cells - An overview
2. Layered tunnel barriers for nonvolatile memory devices