Waveform characterization and modeling of dynamic charge behavior of InGaP-GaAs HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 675-678

  Wei, C J ^a   Sprinkle, S ^a   Hu, J T ^b   Chung, H C ^a   Mitchell, B ^a   Dicarlo, P ^a   Bartle, D ^a  

^a Alpha Industries Inc   (United States)

^b Network Device Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; POWER AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS; TIME DOMAIN ANALYSIS; WAVEFORM ANALYSIS;

COLLECTOR-BASE CHARGE MODEL; SELF-BIASING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035689574     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966984     Document Type: Article

References (8)

1. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs
2. A new spice-type HBT model for DC, microwave small-signal circuit simulations
3. A new large signal HBT model
4. A non-quasi-static model of GaInP/AlGaAs HBT for power applications
5. Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs
6. Waveform measurement technique and its applications to optimum loading studies on power FETs
7. New method for direct extraction of HBT equivalent circuit parameters
8. Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors