SCOPUS 정보 검색 플랫폼

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1713-1716

185 GHz monolithic amplifier in InGaAs/InAlAs transferred-substrate HBT technology

(6) Urteaga, M a Scott, D a Mathew, T a Krishnan, S a Wei, Y a Rodwell, M J W a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TUNING;

MONOLITHIC AMPLIFIER; SIGNAL GAIN; SINGLE STAGE TUNED AMPLIFIER; TRANSFERRED SUBSTRATE TECHNOLOGY;

MICROWAVE AMPLIFIERS;

EID: 0035686458 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (5)

References (10)

1
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2
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- Proceedings 12th Intl. Conf. On Indium Phosphide and Related Materials, May 2000 , pp. 67-70
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3
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5
- 0007868643
- InAlAs/InGaAs HBTs with simultaneously high values of Ft and Fmax for mixed analog/digital applications
- to be published, accepted October
- (2000) IEEE Elect Dev. Lett
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6
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- Broadband HBT amplifiers
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7
- 0032307975
- Basedband amplifiers in the transferred substrate HBT technology
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8
- 0033688141
- HBT MMIC 75GHz and 78GHz power amplifiers
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9
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- June 13-15
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10
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- Jaganathan, S.¹

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