Experimental analysis of self-pulsation in 650-nm-wavelength AlGaInP laser diodes with epitaxial absorbing layers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 745-749

  Summers, H D ^a   Molloy, C H ^a   Smowton, P M ^a   Rees, P ^b   Pierce, I ^b   Jones, D R ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b BANGOR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICS; HIGH TEMPERATURE OPERATIONS; LIGHT MODULATION; NONLINEAR OPTICS; OPTICAL BISTABILITY; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LIFETIME; DECAY TIME; EPITAXIAL ABSORBING LAYERS; SELF PULSATION CHARACTERISTICS; SEMICONDUCTOR ALUMINUM GALLIUM INDIUM PHOSPHIDE; TIME RESOLVED PHOTOLUMINESCENCE TECHNIQUES;

SEMICONDUCTOR LASERS;

EID: 0033123648     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788446     Document Type: Article

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