Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1687-1690

  Inoue, Akira ^a   Nakatsuka, Shigenori ^b   Suzuki, Satoshi ^a   Yamamoto, Kazuya ^a   Shimura, Teruyuki ^a   Hattori, Ryo ^a   Mitsui, Yasuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Miyoshi Electronics Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; WAVEFORM ANALYSIS;

CURRENT WAVEFORM; MICROWAVE WAVEFORM MEASUREMENT SYSTEM; SWEEPING LOAD LINES; VOLTAGE WAVEFORM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035683080     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967230     Document Type: Article

References (5)

1. A 3.2V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique
2. Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
3. Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities
4. Avalanche breakdown in HBTs: Variation in collector current and effect in linearity
5. A 40GHz large-signal double-reflectmeter waveform measurement system designed for load-pull applications