FIR lasing based on group V donor transitions in silicon

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 342-348

  Orlova, E E ^a   Pavlov, S G ^a,c   Zhukavin, R Kh ^a   Shastin, V N ^a   Kirsanov, A V ^b   Hubers H W ^c   Auen, K ^c   Rummeli M ^c   Roser H P ^c   Riemann, H ^d  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INSTITUTE OF APPLIED PHYSICS   (Russian Federation)

^c GERMAN AEROSPACE CENTER DLR   (Germany)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Far infrared; Laser; Shallow donors; Silicon

Indexed keywords

CARBON DIOXIDE LASERS; INVERSE PROBLEMS; LIGHT EMISSION; PHASE TRANSITIONS; PHONONS; SEMICONDUCTOR DOPING;

PHONON ASSISTED INTRACENTER RELAXATION; SHALLOW DONOR TRANSITIONS;

SEMICONDUCTING SILICON;

EID: 0034967794     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00452-5     Document Type: Conference Paper

References (22)