Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 434-436

  Marmalyuk, A A ^a   Govorkov, O I ^b   Petrovsky, A V ^a   Nikitin, D B ^a   Padalitsa, A A ^a   Bulaev, P V ^a   Budkin, I V ^a   Zalevsky, I D ^a  

^a Sigm Plus Co   (Russian Federation)

^b Polyus Research Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BARRIER LAYERS; SURFACE SEGREGATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035677090     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/4/309     Document Type: Conference Paper

References (13)