X-ray analysis of in distribution in molecular beam epitaxy grown InGaAs/GaAs quantum well structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1872-1874

  Fujimoto, Shingo ^a   Aoki, Mitsuru ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Secondary ion mass spectroscopy; Sticking coefficient; Strained inGaAs; Surface segregation; X ray diffraction method

Indexed keywords

EID: 0001647462     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1872     Document Type: Article

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