N-channel conductance spectroscopy of deep defects in low temperature grown GaAs

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1177-1180

  Steen, C ^a   Kiesel, P ^a   Tautz, S ^a   Kramer S ^a   Soubatch, S ^a   Malzer, S ^a   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

AsGa antisite defect; Electron emission rate; LT GaAs

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; ELECTRIC CONDUCTANCE; ELECTRON TRAPS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR DIODES; SPECTROSCOPIC ANALYSIS; THIN FILMS;

DEEP DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035672743     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00934-6     Document Type: Article

References (6)