Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1193-1196

  Hori, A ^a   Yasunaga, D ^a   Satake, A ^a   Fujiwara, K ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electroluminescence; Recombination; Wide band gap semiconductors

Indexed keywords

CHARGE CARRIERS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

SINGLE QUANTUM WELL (SQW) DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035672459     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00939-5     Document Type: Article

References (11)