Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 167-170

  Tokmoldin, S Zh ^a   Mukashev, B N ^a  

^a INSTITUTE OF PHYSICS AND TECHNOLOGY   (Kazakhstan)

Author keywords

Hydrogen; Platelets; Silicon; Vacancies

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; HYDROGENATION; ION IMPLANTATION; PROTONS; SPECTRUM ANALYSIS; THERMODYNAMIC STABILITY;

PROTON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0035670951     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00681-0     Document Type: Article

References (22)

1. Tetrahedrally Bonded Amorphous Semiconductors