The PL "violet shift" of cerium dioxide on silicon

Chinese Science Bulletin

Volumn 46, Issue 24, 2001, Pages 2046-2048

  Chai, C ^a   Yang, S ^a   Liu, Z ^a   Liao, M ^a   Chen, N ^a   Wang, Z ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cerium dioxide thin film; PL violet shift

Indexed keywords

CERIUM; OXIDE; SILICON;

ANALYTIC METHOD; ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC FIELD; ELLIPSOMETRY; FILM; TEMPERATURE; X RAY DIFFRACTION;

VIOLA (ANGIOSPERM);

EID: 0035670760     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02901128     Document Type: Article

References (17)

1. 2 thin films depositied on Si(100) substrates by r.f.-magnetron sputtering
2. 2(110) layers on Si(100) using electron beam assisted evaporation
3. 2 films grown on Si(111) by pulsed laser deposition
4. Initial stage and growth process of ceria, yttria-stabilized-zirconia and ceria-zirconia mixture thin films on Si(100) surfuces
5. 2(111)/Si(111) structures
6. Thin film deposition of dielectric oxides by laser ablation
7. Violet/blue emission from epitaxial cerium oxide films on silicon substrates
8. Violet/blue light-emitting cerium silicates
9. Luminescence from the thermally treated cerium oxide on silicon
10. Construction and applications of a dual mass-selected low-energy ion beam system
11. 2: Optical reflectivity measurements
12. 2 crystal in the photon energy range of 2.5-40 eV
13. Optical absorption in thin films of cerium dioxide and cerium dioxide containting silicon monoxide
14. 2 single crystals
15. Thermodynamic studies of the phase relationships of nonstoichiometric cerium oxides at higher temperatures
16. 2/Si heterostructure grown by ion beam deposition
17. 2/Si films grown by ion beam epitaxy