Diagnostics of semiconductor devices beyond the diffraction limit of light

Sensors and Materials

Volumn 13, Issue 8, 2001, Pages 445-460

  Fukuda, Hiroaki ^a,b   Saiki, Toshiharu ^c,d   Ohtsu, Motoichi ^a,e  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RICOH COMPANY LTD   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Diffusion length; Dopant concentration; Fiber probe; GaAs device; Minority carrier; Near field optical microscope; Near field photocurrent; P n junction; Si device

Indexed keywords

EID: 0035649041     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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