Near-field photocurrent measurements of Si p-n junction under the reverse-bias condition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages

  Fukuda, Hiroaki ^a,b   Ohtsu, Motoichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RICOH COMPANY LTD   (Japan)

Author keywords

Dopant concentration; Fiber probe; Near field optical microscope; Near field photocurrent; p n junction; Si semiconductor device

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC POTENTIAL; NEAR FIELD SCANNING OPTICAL MICROSCOPY; PHOTOCURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

DOPANT CONCENTRATIONS; REVERSE-BIAS CONDITIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0035867953     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l286     Document Type: Article

References (11)