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Volumn 35, Issue 12, 2001, Pages 1375-1377

The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035644004     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1427974     Document Type: Article
Times cited : (13)

References (19)
  • 16
    • 0006641830 scopus 로고
    • I. Ohdomari, M. Oshima, A. Hiraki Elsevier, Amsterdam
    • W. Mönch, in Control of Semiconductor Interfaces, Ed. by I. Ohdomari, M. Oshima, and A. Hiraki (Elsevier, Amsterdam, 1994), p. 169.
    • (1994) Control of Semiconductor Interfaces , pp. 169
    • Mönch, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.