Nanometer-scale investigation of Schottky contacts and conduction band structure on 4H-, 6H- and 15R-SiC using ballistic election emission microscopy

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 813-816

  Im, H J ^a   Kaczer, B ^a   Pelz, J P ^a   Chen, J ^b   Choyke, W J ^c  

^a OHIO STATE UNIVERSITY   (United States)

^b University of Florida   (United States)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Ballistic Electron Emission Microscopy; Band Structure; Barrier Height; Electrical Stressing; Metal Semiconductor Interface; Schottky Contacts

Indexed keywords

BAND STRUCTURE; ELECTRON EMISSION; MICROSCOPIC EXAMINATION; PALLADIUM; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SPURIOUS SIGNAL NOISE;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); CONDUCTION BAND MINIMUM (CBM); ELECTRICAL STRESSING; HOT ELECTRON INJECTION; SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 0031675101     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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