Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer

Chinese Physics Letters

Volumn 18, Issue 5, 2001, Pages 662-664

  Liu, Wei Li ^a   Duo, Xin Zhong ^a   Wang, Lian Wei ^a   Zhang, Miao ^a   Shen, Qin Wo ^a   Lin, Cheng Lu ^a   Chu, Paul K ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES; VACUUM EVAPORATION;

ATOMIC-FORCE-MICROSCOPY; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; ELECTRON BEAM EVAPORATION; EPITAXIAL LAYER TRANSFERS; POROUS SI; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING CHANNELING; RUTHERFORD BACKSCATTERING SPECTROMETRY; SILICON ON INSULATOR STRUCTURES; SILICON-ON-INSULATOR MATERIALS;

POROUS SILICON;

EID: 0035614746     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/5/313     Document Type: Article

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