Unibond synthesis of silicon on insulator material

Chinese Physics Letters

Volumn 14, Issue 1, 1997, Pages 55-58

  Zhang, Miao ^d   Zhu, Shi Yang ^a,b   Li, Jin Hua ^c   Ni, Ru Shan ^a   Lin, Cheng Lu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b FUDAN UNIVERSITY   (China)

^c Jiangsu Petrochemical Industry College   (China)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON OXIDES;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; HIGH QUALITY; NEW MEMBERS; QUALITY OF SILICONS; RUTHERFORD BACKSCATTERING SPECTROMETRY; SI LAYER; SILICON ON INSULATOR; SILICON-ON-INSULATOR MATERIALS; SILICONON-INSULATOR TECHNOLOGY (SOI); UNIBOND;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031326210     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/1/015     Document Type: Article

References (12)

1. J. P. Collinge, Silicon-on-Insulator Technology, Material to VLSI (Kluwer Academic Publishers, Boston, 1991).
2. M. P. Brassington, IEEE Trans. Electron Devices, 32 (1985) 1858.
3. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices (Kluwer Academic Publishers, Boston, 1995).
4. Y. H. Yu, C. L. Lin, Acta Phys. Sin. 38 (1989) 1996 (in Chinese).
5. J. P. Ruffel et al., Nucl. Instrum. Methods, B21 (1987) 229.
6. K. G. Stephens et al., Nucl. Instrum. Methods, 850 (1990) 368.
7. R. Steny, T. Tan and U Gössele, Jpn. J. Appl. Phys. 28 (1989) 1735.
8. S. Cristoloveanu et al., Proc. of 7th Inter. Symp. on Silicon-on-Insulator Technology and Devices, edited by P. L. F. Hemment et al., (1996) Vol. 3, p. 142.
9. M. Bruel, Electron. Lett. 31 (1995) 1201.
10. M. J. Stein, S. M. Myers and D. M. Follstaed, J. Appl. Phys. 73 (1993) 2755.
11. V. Raineri, P. G. Fallica and G. Percolla, J. Appl. Phys. 78 (1995) 3727.
12. F.Päszti et al., Nucl. Instrum. Methods, B 7-8 (1985) 371.