Electron mobility in one (two)-side modulation-doped GaAs/AlxGa1-xAs asymmetric quantum wells

Physica Status Solidi (B) Basic Research

Volumn 225, Issue 1, 2001, Pages 43-61

  Lima, F M S ^a   Fanyao, Qu ^a   Nunes, O A C ^a   Fonseca, A L A ^a  

^a UNIVERSITY OF BRASILIA   (Brazil)

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Indexed keywords

EID: 0035613687     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(200105)225:1<43::AID-PSSB43>3.0.CO;2-D     Document Type: Article

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