The 2-D-3-D crossover in modulation-doped GaAs-Ga1-xAlxAs quantum wells

IEEE Journal of Quantum Electronics

Volumn 33, Issue 9, 1997, Pages 1492-1497

  Qu, Fanyao ^a   Morais, P C ^a  

^a UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Charge carrier processes; Electrooptic materials; Optical control; Quantum wells; Semiconductor materials

Indexed keywords

CHARGE CARRIERS; ELECTROOPTICAL MATERIALS; OPTICAL VARIABLES CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

MODULATION DOPED QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031237659     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.622628     Document Type: Article

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