Investigation of the magnetic field dependence of electronic and optical properties in one-side modulation-doped GaAs-Ga1-xAlxAs quantum wells

IEEE Journal of Quantum Electronics

Volumn 34, Issue 8, 1998, Pages 1419-1425

  Qu, Fanyao ^b   Morais, P C ^a,b  

^a IEEE

^b UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Electrooptic materials; Gallium materials; Quantum wells; Semiconductor heterojunctions; Semiconductor materials

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; FERMI LEVEL; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; VARIATIONAL TECHNIQUES;

ELECTROOPTIC MATERIALS; POISSON EQUATIONS; SCHRODINGER EQUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032140799     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.704334     Document Type: Article

References (18)

1. H. L. Stormer, A. Pinczuk, A. C. Gossard, and W. Wiegmann, "Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices," Appl. Phys. Lett., vol. 38, pp. 691-693, 1981.
2. 1-xAs structure," Phys. Rev. B, vol. 46, pp. 3886-3892, 1992.
3. M. S. Skolnick, J. M. Rorison, K. J. Nash, D. J. Mowbray, P. R. Tapster, S. J. Bass, and A. D. Pitt, "Observation of a many-body edge singularity in quantum-well luminescence spectra," Phys. Rev. Lett., vol. 58, pp. 2130-2133, 1987.
4. F. Qu and P. C. Morais, "The 2-D-3-D crossover in modulation doped GaAs-GaAlAs quantum wells," IEEE J. Quantum Electron., vol. 33, pp. 1492-1497, 1997.
5. G. Tränkle, H. Leier, and A. Forchel, "Dimensionality dependence of the plasmas in GaAs," Phys. Rev. Lett., vol. 58, pp. 419-423, 1987.
6. C. Delalande, J. Orgonasi, J. A. Brum, G. Bastard, M. Voos, G. Weimann, and W. Schlapp, "Optical studies of a GaAs quantum well based field-effect transistor," Appl. Phys. Lett., vol. 51, pp. 1346-1348, 1987.
7. Y. W. Chen, H. S. Li, Z. Zhou, and K. L. Wang, "Transfer-matrix analysis of waveguide phase modulator using the linear electro-optic effect of asymmetric quantum wells," J. Appl. Phys., vol. 76, pp. 4903-4905, 1994.
8. G. Almogy, Y. Xu, A. Tong, A. Shalouri, and A. Yariv, "Monolithic intergration of quantum well of infrared photodetector and modulator," Appl. Phys. Lett., vol. 68, pp. 2088-2090, 1996.
9. C. Delalande, J. Orgonasi, J. A. Brum, G. Bastard, M. Voos, G. Weimann, and W. Schlapp, "Optical studies of a GaAs quantum well based field-effect transistor," Appl. Phys. Lett., vol. 51, pp. 1346-1348, 1987.
10. A. J. C. Cardoso, P. C. Morais, and H. M. Cox, "Investigation of many-body effects in one-side modulation-doped InP-InGaAs heterostructure," Appl. Phys. Lett., vol. 68, pp. 1105-1107, 1996.
11. xAs modulation doped quantum well," Solid State Commun., vol. 59, pp. 613-617, 1986.
12. A. S. Chaves, A. F. S. Penna, J. M. Worlock, G. Weimann, and W. Schlapp, "Optical control of two-dimensional electron density in a single asymmetric quantum well," Surf. Sci., vol. 170, pp. 618-623, 1986.
13. A. S. Chaves and H. Chacham, "Negative photoconductivity in semiconductor heterostructures," Appl. Phys. Lett., vol. 66, pp. 727-729, 1995.
14. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, "Self-consistent calculation in InAs-GaSb heterojunctions," J. Vac. Sci. Technol., vol. 21, pp. 531-533, 1982.
15. 1-xAs heterostructures and quantum wells," Phys. Rev. B, vol. 55, pp. 7702-7714, 1997.
16. A. B. Henriques, "Quantum and transport mobilities in δ-doped semiconductors," Phys. Rev. B, vol. 53, pp. 16365-16371, 1996.
17. T. Uenoyama and L. J. Sham, "Many-body theory of magneto-optical spectra in doped quantum wells," Phys. Rev. B, vol. 39, pp. 11044-11049, 1989.
18. 1 excitonic transition as a function of the magnetic field in modulation doped GaAlAs/GaAs quantum well," J. Phys. IV - Coll. C5, Suppl. J. Phys. II, vol. 3, pp. 323-326, 1993.