SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 621-624

Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures

(8) Teng, J H a Dong, J R a Chua, S J a Thompson, D A b Robinson, B J b Lee, A S W b Hazell, John b Sproule, Irwin c

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b MCMASTER UNIVERSITY (Canada)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

Bandgap tuning; Interdiffusion; Photonic integrated circuit; Quantum well; Quantum well intermixing

Indexed keywords

CRYSTAL IMPURITIES; DIELECTRIC MATERIALS; DIFFUSION; ELECTRON BEAMS; ENERGY GAP; EVAPORATION; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THIN FILMS;

QUANTUM WELL INTERMIXING (QWI);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035575240 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00030-6 Document Type: Conference Paper

Times cited : (6)

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