Surface defects on MBE grown HgCdTe

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 20, Issue 6, 2001, Pages 406-410

  Chen, Lu ^a   Wu, Yan ^a   Yu, Mei Fang ^a   Wang, Shan Li ^a   Qiao, Yi Min ^a   He, Li ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

HgCdTe; MBE; Surface defects

Indexed keywords

CRYSTAL DEFECTS; SCANNING ELECTRON MICROSCOPY;

MBE GROWN HGCDTE; SURFACE DEFECTS;

MOLECULAR BEAM EPITAXY;

EID: 0035560872     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Molecular beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared application
2. Microscopic defects on MBE LWIR HgCdTe material and their impact on device
3. Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes
4. x Te grown in by molecular beam epitaxy
5. Formation and control of defects during molecular beam epitaxial growth of HgCdTe
6. Uniform low defect density molecular beam epitaxial HgCdTe
7. Defect modeling studies in HgCdTe and CdTe
8. A study of MBE growth and thermal annealing of p-type long wave-length HgCdTe
9. Dislocation density of MBE HgCdTe ZnCdTe substrates
10. Improving material characteristics and reproducibility of MBE HgCdTe