SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages

Evolution of the mobility gap with thickness in hydrogen-diluted intrinsic Si:H materials in the phase transition region and its effect on p-i-n solar cell characteristics

(5) Koval, R J a Pearce, J M a Ferlauto, A S a Collins, R W a Wronski, C R a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER MOBILITY; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; ENERGY GAP; HYDROGENATION; NUCLEATION; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SILICON SOLAR CELLS;

MOBILITY GAPS;

THIN FILMS;

EID: 0035560031 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-664-a16.4 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.