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Volumn 639, Issue , 2001, Pages
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Optical and electrical properties of Al1-xInxN films grown on sapphire (0001) by plasma source molecular beam epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ORIENTATION;
ELECTRIC CONDUCTIVITY;
ENERGY GAP;
FILM GROWTH;
HALL EFFECT;
LIGHT REFLECTION;
LIGHT TRANSMISSION;
MOLECULAR BEAM EPITAXY;
PLASMA APPLICATIONS;
SAPPHIRE;
SEMICONDUCTING FILMS;
X RAY DIFFRACTION ANALYSIS;
ATOMIC FORCE MICROSCOPY;
COMPOSITION;
EPITAXIAL GROWTH;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SURFACE ROUGHNESS;
TEMPERATURE;
ALLOY FILMS;
DEGREE OF CRYSTALLINE MOSAICITY;
PLASMA SOURCE MOLECULAR BEAM EPITAXY;
ALUMINUM INDIUM NITRIDES;
COMPOSITIONAL FLUCTUATION;
CRYSTALLINE MOSAICITY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
ALUMINUM COMPOUNDS;
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EID: 0035559698
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (15)
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