Properties of silicon films deposited under argon dilution

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages A2311-A2317

  Longeaud, C ^a   Roy, D ^a   Chaudhuri, P ^a   Dutta Gupta, N ^a   Pratim Ray, P ^a   Vignoli, S ^a   Meaudre, R ^a   Meaudre, M ^a   Saviot, L ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARGON; DECOMPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILANES;

SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0035559230     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-664-a23.1     Document Type: Article

References (9)