Direct measurement of planarization length for copper chemical mechanical planarization polishing (CMP) processes using a large pattern test mask

Materials Research Society Symposium - Proceedings

Volumn 671, Issue , 2001, Pages

  Lefevre, Paul ^a   Gonzales, Albert ^a   Brown, Tom ^a   Martin, Gerald ^a   Tugbawa, Tamba ^a   Park, Tae ^a   Boning, Duane ^a   Gostein, Michael ^a   Nguyen, John ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ELECTROPLATING; MASKS; MATERIALS TESTING; SPATIAL VARIABLES MEASUREMENT;

LARGE PATTERN TEST MASK; PLANARIZATION LENGTH;

COPPER;

EID: 0035558993     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Determination of the planarization distance for copper CMP process
2. Modeling of chemical mechanical polishing for dielectric planarization
3. Using wafer-scale patterns for CMP analysis
4. Modeling of pattern dependencies for multi-level copper chemical mechanical polishing processes